N沟道600 V、0.400 Ohm典型值、6.5 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

N-channel 600 V, 0.400 廓 typ., 6.5 A MDmesh??M2 Power MOSFET in a PowerFLAT 5x6 HV package

文件：474.31 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：404.07 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：383.95 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体