N沟道600 V、0.395 Ohm典型值、9 A MDmesh M2功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

Extremely low gate charge

文件：404.07 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：383.95 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.395 Ω typ., 9 A MDmesh M2 Power MOSFET in a DPAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout

文件：590.55 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：394.65 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.395 廓 typ., 9 A MDmesh??M2 Power MOSFET in an I짼PAKFP package

文件：380.54 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体