N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Extremely low gate charge\nExcellent output capacitance (C\nOSS) profile\n100% avalanche tested\nZener-protected;

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意法半导体

丝印：12N60M2；Package：I2PAKFP；N-channel 600 V, 0.395 廓 typ., 9 A MDmesh??M2 Power MOSFET in an I짼PAKFP package

文件：380.54 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.400 廓 typ., 6.5 A MDmesh??M2 Power MOSFET in a PowerFLAT 5x6 HV package

文件：474.31 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：404.07 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：383.95 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体