丝印：AP50P10NF；Package：DFN5X6-8L；-100V P-Channel Enhancement Mode MOSFET

文件：2.63234 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 package

文件：601.04 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

P沟道60 V、0.13 Ohm典型值、3 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

This device is an P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

ST/意法
POWERFLAT5X6

ST/意法

上传：深圳庞田科技有限公司

ST
QFN

ST

上传：深圳市向鸿伟业电子有限公司