Very low intrinsic capacitance

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：1.38052 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Very low intrinsic capacitance

ST

意法半导体

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.09242 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03498 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel Mosfet Transistor

文件：303.85 Kbytes 页数：2 Pages

ISC

无锡固电