丝印：11N65M5；Package：PowerFLAT；N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package

Description This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high po

文件：1.04176 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.475 Ohm典型值、8.5 A MDmesh M5功率MOSFET，PowerFLAT 5x5 HV封装

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

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isc N-Channel MOSFET Transistor

文件：246.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.2819 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.2819 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体