丝印：105DN4L；Package：PowerFLAT；Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes

文件：965.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道40 V、8 mOhm典型值、15 A STripFET F7功率MOSFET，PowerFLAT 5x6双岛封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

ST

意法半导体

ST/意法
POWERFLAT5X6

ST/意法

上传：深圳庞田科技有限公司

ST
QFN

ST

上传：深圳市向鸿伟业电子有限公司

STM
DFN5X6

STM

信盛

上传：深圳市金芯世纪电子有限公司