丝印：10LN80K5；Package：D2PAK；N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

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STMICROELECTRONICS

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丝印：10LN80K5；Package：DPAK；N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a DPAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tec

文件：842.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：10LN80K5；Package：PowerFLAT；N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：833.4 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：10LN80K5；Package：TO-220FP；N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：714.63 Kbytes 页数：14 Pages

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丝印：10LN80K5；Package：IPAKFP；N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

文件：628.74 Kbytes 页数：13 Pages

STMICROELECTRONICS

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