10N80

型号：10N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=1.0Ω@Vgs=10V,Id=5A LowgateCharge(typical45nC) LowCrss(typical6.3pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

10N80

型号：RMP10N80IP；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

10N80

型号：RMP10N80LD；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

10N80

型号：RMP10N80T2；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

10N80

型号：RMP10N80TI；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

10N80K5

型号：STF10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

10N80K5

型号：STF10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

10N80K5

型号：STFU10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

10N80K5

型号：STH10N80K5-2AG；Package：H2PAK-2；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features •AEC-Q101qualified •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technolo

10N80AP

型号：YFW10N80A6；Package：TO-247；10A 800V N-channel enhanced field effect transistor