丝印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：841.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.470 Ohm典型值、9 A MDmesh K5功率MOSFET，TO-220FP超窄引线封装

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：841.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：841.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：576.74 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体