STFU10N80K5

丝印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STFU10N80K5

N沟道800 V、0.470 Ohm典型值、9 A MDmesh K5功率MOSFET，TO-220FP超窄引线封装; • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n

STFU10N80K5_V01

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STF10N80K5

N-channel800V,0.470Ωtyp.,9AMDmesh™K5PowerMOSFETsinaTO-220FPandTO-220FPultranarrowleads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STF10N80K5

N-channel800V,0.470??typ.,9AMDmesh??K5PowerMOSFETinaTO-220FPpackage

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi