STF10N80K5

Marking：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STF10N80K5

Marking：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STFU10N80K5

Marking：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STH10N80K5-2AG

Marking：10N80K5；Package：H2PAK-2；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features •AEC-Q101qualified •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technolo