丝印：10P6F6；Package：DPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：10P6F6；Package：TO-220FP；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：10P6F6；Package：TO-220；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：10P6F6；Package：IPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体