| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：10P6F6；Package：DPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET™F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：10P6F6；Package：TO-220FP；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET™F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：10P6F6；Package：TO-220；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET™F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：10P6F6；Package：IPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET™F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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