P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications

文件：1.20301 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：10P6F6；Package：TO-220FP；P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in TO-220FP package

These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

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N-Channel 60 V(D-S) MOSFET

文件：1.09165 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages

Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Lo

文件：490.86 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体