3.0SMC11

Marking：11；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

7UL1T00FS

Marking：11；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •2-InputNANDGatewithLevelShifting Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinput

7UL1T00FU

Marking：11；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •2-InputNANDGatewithLevelShifting Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinput

D22V0H1U2LP-7B

Marking：11；Package：X1-DFN1006-2；22V UNI-DIRECTIONAL TVS DIODE

Features •LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprintArea(1.08mm×0.68mmMax)SuitableforCompactPortableElectronics •ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV •OneChannelofESDProtection •LowChannelInputCapacitance •Total

LZ52C11W

Marking：11；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES •Forsurfacemountedapplication •Siliconepitaxialplanardiode •Ultrasmallsurfacemountpackage •Lowleakagecurrent •2tolerancedeviceofVz •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

MMBD1501

Marking：11；Package：SOT-23；Small Signal Diodes

NJW4104U3-05B

Marking：11；Package：SOT-89-3；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ●LowQuiescentCurrent5.5μAtyp.(Aversion) 5.0μAtyp.(Bversion) ●OperatingVoltage4.0Vto40V ●OperatingTemperatureTa=-40Cto125°C ●OutputVoltageAccuracyVO1.0(Ta=25C) VO2.0(Ta=-40Cto125°C) ●OutputCurrentIO(min.)=200mA ●ON/OFFControlAver.only ●Corres

PBSS4160QA-Q

Marking：11；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

PDTA114TE

Marking：11；Package：SC-75；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTA114TT

Marking：11；Package：SOT23；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts