丝印：11；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微电子

丝印：11；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NAND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.33 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：11；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NAND Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：171.66 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：11；Package：X1-DFN1006-2；22V UNI-DIRECTIONAL TVS DIODE

Features • Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm × 0.68mm Max) Suitable for Compact Portable Electronics • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • One Channel of ESD Protection • Low Channel Input Capacitance • Total

文件：199.9 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：11；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES • For surface mounted application • Silicon epitaxial planar diode • Ultra small surface mount package • Low leakage current • 2 tolerance device of Vz • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：427.4 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：11；Package：SOT-23；Small Signal Diodes

文件：88.57 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：11；Package：SOT-89-3；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ● Low Quiescent Current 5.5μA typ.(A version) 5.0μA typ.(B version) ● Operating Voltage 4.0V to 40V ● Operating Temperature Ta=-40 C to 125°C ● Output Voltage Accuracy VO 1.0(Ta=25 C) VO 2.0(Ta=-40 C to 125°C) ● Output Current IO(min.)=200mA ● ON/OFF Control A ver. only ● Corres

文件：786.88 Kbytes 页数：21 Pages

NJRCNew Japan Radio

新日本无线株式会社

丝印：11；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：296.09 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：11；Package：SC-75；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：202.93 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：11；Package：SOT23；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：202.93 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司