丝印：1101；Package：SOD882D；30 V, 0.2 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

文件：1.3625 Mbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1101；Package：SOT-25；ADJUSTABLE LED DRIVER WITH INTERNAL SWITCH IN TSOT23-5

DESCRIPTION The ZXLD1101 is a PFM inductive boost converter designed for driving 2, 3 or 4 series connected white LEDs from a Li-Ion cell and up to 8 LEDs from a 5V supply. The device operates from an input supply of between 2.5V and 5.5V and provides an adjustable output current of up to 50mA.

文件：221.97 Kbytes 页数：16 Pages

Zetex

丝印：110100；Package：DFN1010D-3；45 V, 500 mA NPN general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

文件：879.72 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：110111；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ reduced pick and place costs

文件：2.80964 Mbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：110111；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  built-in bias resistors  simplifies circuit design  reduces component count  reduced pick and place costs  low package height of 0.37 mm  AEC-Q101 qualified  suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.80866 Mbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：110111；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1

文件：2.80864 Mbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司