PMEG3002AELD

Marking：1101；Package：SOD882D；30 V, 0.2 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

TPS1101D

Marking：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.09WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1101isasingle,low-rDS(on),P-c

TPS1101D.A

Marking：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.09WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1101isasingle,low-rDS(on),P-c

TPS1101DR

Marking：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.09WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1101isasingle,low-rDS(on),P-c

TPS1101DR.A

Marking：1101；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.09WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVper MIL-STD-883C,Method3015 description TheTPS1101isasingle,low-rDS(on),P-c

ZXLD1101

Marking：1101；Package：SOT-25；ADJUSTABLE LED DRIVER WITH INTERNAL SWITCH IN TSOT23-5

DESCRIPTION TheZXLD1101isaPFMinductiveboostconverterdesignedfordriving2,3or4seriesconnectedwhiteLEDsfromaLi-Ioncellandupto8LEDsfroma5Vsupply.Thedeviceoperatesfromaninputsupplyofbetween2.5Vand5.5Vandprovidesanadjustableoutputcurrentofupto50mA.

BC817-25QA

Marking：110100；Package：DFN1010D-3；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

PDTA114EQA

Marking：110111；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■reducedpickandplacecosts

PDTA114EQA

Marking：110111；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits 100mAoutputcurrentcapability built-inbiasresistors simplifiescircuitdesign reducescomponentcount reducedpickandplacecosts lowpackageheightof0.37mm AEC-Q101qualified suitableforAutomaticOpticalInspection (AOI)ofsolderjoint

PDTA114EQA

Marking：110111；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

1.1Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1