TPS1101DR中文资料德州仪器数据手册PDF规格书

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V

3 V Compatible

Requires No External VCC

TTL and CMOS Compatible Inputs

VGS(th) = –1.5 V Max

Available in Ultrathin TSSOP Package (PW)

ESD Protection Up to 2 kV per

MIL-STD-883C, Method 3015

description

The TPS1101 is a single, low-rDS(on), P-channel,

enhancement-mode MOSFET. The device has

been optimized for 3-V or 5-V power distribution

in battery-powered systems by means of the

Texas Instruments LinBiCMOSE process. With a

maximum VGS(th) of –1.5 V and an IDSS of only

0.5 mA, the TPS1101 is the ideal high-side switch

for low-voltage, portable battery-management

systems where maximizing battery life is a primary

concern. The low rDS(on) and excellent ac

characteristics (rise time 5.5 ns typical) of the

TPS1101 make it the logical choice for

low-voltage switching applications such as power

switches for pulse-width-modulated (PWM)

controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or

TSSOP (PW) version fits in height-restricted

places where other P-channel MOSFETs cannot.

The size advantage is especially important where

board height restrictions do not allow for an

small-outline integrated circuit (SOIC) package.

Such applications include notebook computers,

personal digital assistants (PDAs), cellular

telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other

P-channel MOSFETs in SOIC packages.