PDTA115TK

Marking：11；Package：SC-59；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTA115TU

Marking：11；Package：SC-70；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTC143TEF

Marking：11；Package：SOT490；NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitapplications.

PDTC143TEF

Marking：11；Package：SOT490；NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

PDTC143TEF

Marking：11；Package：SOT-490；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PESD5V0X1BCL

Marking：11；Package：DFN1006-2；Extremely low capacitance bidirectional ESD protection diode

1.1Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodein aleadlessultrasmallSOD882(DFN1006-2)Surface-MountedDevice(SMD)plastic packagedesignedtoprotectonesignallinefromthedamagecausedbyESDandother transients.Thec

PESD5V0X1BCL-Q

Marking：11；Package：SOD882；Extremely low capacitance bidirectional ESD protection diode

1.Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeina leadlessultrasmallSOD882(DFN1006-2)Surface-MountedDevice(SMD)plasticpackage, designedtoprotectonesignallinefromthedamagecausedbyESDandothertransients.The c

PMXB350UPE

Marking：11；Package：SOT1215；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultrathi

PMXB360ENEA

Marking：11；Package：SOT1215；80 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •LeadlessultrasmallandultrathinS

PMXB43UNE

Marking：11；Package：SOT1215；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •LeadlessultrasmallandthinSMD