丝印：1100；Package：SOT23-6；16-Bit ADC with On-board Reference

PRODUCT DESCRIPTION The MS1100 is a 16bit high-precision ADC. The on-board reference provides a differential input range of ±2.048V. The MS1100 uses an I2C serial interface. The power supply ranges from 2.7V to 5.5V. The MS1100 can perform conversions at rates of 15, 30, 60 or 240 samples per

文件：411.5 Kbytes 页数：16 Pages

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丝印：1100；Package：SOD882D；Bidirectional ESD protection diode

1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：279.2 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1100；Package：DFN1006D-2；Bidirectional ESD protection diode

1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：284.64 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOT-5X3；TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7 V to 6 V • Output voltage from 0.6 V to 5.5 V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 0.5-A, 1-A, 2-A (conti

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TI

德州仪器

丝印：110010；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits • Very low collector-

文件：744.15 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司