1100

型号：MS1100；Package：SOT23-6；16-Bit ADC with On-board Reference

PRODUCTDESCRIPTION TheMS1100isa16bithigh-precisionADC.Theon-boardreference providesadifferentialinputrangeof±2.048V.TheMS1100usesan I2Cserialinterface.Thepowersupplyrangesfrom2.7Vto5.5V. TheMS1100canperformconversionsatratesof15,30,60or240 samplesper

1100

型号：PESD5V0S1BLD；Package：SOD882D；Bidirectional ESD protection diode

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. ThedeviceishousedinaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plastic packagewithvisibleandsolde

1100

型号：PESD5V0S1BLD-Q；Package：DFN1006D-2；Bidirectional ESD protection diode

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. ThedeviceishousedinaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plastic packagewithvisibleandsolde

1100

型号：TPS1100D；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVPer MIL-STD-883C,Method3015 description TheTPS1100isasingleP-channel enhanc

1100

型号：TPS1100D.A；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVPer MIL-STD-883C,Method3015 description TheTPS1100isasingleP-channel enhanc

1100

型号：TPS1100DR；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVPer MIL-STD-883C,Method3015 description TheTPS1100isasingleP-channel enhanc

1100

型号：TPS1100DR.A；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVPer MIL-STD-883C,Method3015 description TheTPS1100isasingleP-channel enhanc

1100

型号：TPS1100DR.B；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

LowrDS(on)...0.18WTypatVGS=–10V 3VCompatible RequiresNoExternalVCC TTLandCMOSCompatibleInputs VGS(th)=–1.5VMax AvailableinUltrathinTSSOPPackage(PW) ESDProtectionUpto2kVPer MIL-STD-883C,Method3015 description TheTPS1100isasingleP-channel enhanc

1100

型号：TPS628511DRLR；Package：SOT-5X3；TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

110010

型号：PBSS4160QA；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits •Verylowcollector-