丝印：10N80AF；Package：TO-220F；800V N-Channel Multi-EPI Super-Junction MOSFET

Features - - 850V@Tj=150℃ - - 10A,800V, RDS(on) =410mΩ@VGS = 10 V - - Low gate charge(typ. Qg =17.7nC) - - High ruggedness - - Ultra fast switching - - 100% avalanche tested - - Improved dv/dt capability

文件：1.1363 Mbytes 页数：7 Pages

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丝印：10N80AF；Package：TO-220F(1.3mm)；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes 页数：6 Pages

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