丝印：10N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

文件：1.11327 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：10N80；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：578.57 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：10N80；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：578.57 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：10N80；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：578.57 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：10N80；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：578.57 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：576.74 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：841.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：841.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：10N80K5；Package：H2PAK-2；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

文件：424.56 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：10N80AP；Package：TO-247；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes 页数：6 Pages

YFWDIODE

佑风微