N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a I2PAKFP package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Fully insulated and low profile package with increased creepage path from pin toheatsink plate\nIndustry’s lowest R\nDS(on) x area\nIndustry’s best FoM (figure of merit)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

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丝印：10LN80K5；Package：IPAKFP；N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

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STMICROELECTRONICS

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N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

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STMICROELECTRONICS

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N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

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STMICROELECTRONICS

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