N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：958.74 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：1.30609 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 1.0Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：1.10876 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：1.30609 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体