N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in I2PAKFP package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most 100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\n;

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丝印：20NM65N；Package：I2PAKFP(TO-281)；N-channel 650 V, 15 A, 0.250 廓 typ., MDmesh??II Power MOSFET in a I짼PAKFP package

文件：783.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Low gate input resistance

文件：573.92 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Low gate input resistance

文件：573.92 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET ass

文件：864.05 Kbytes 页数：16 Pages

STMICROELECTRONICS

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