N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

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STMICROELECTRONICS

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N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in I2PAKFP package

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor Extremely low gate charge\nLower R\nDS(on)x area vs previous generation\nLow gate input resistance\n100% avalanche tested\nZener-protected;

ST

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N-channel 600 V, 0.168 廓 typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package

文件：692.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.19Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电