N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in I2PAKFP package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Extremely low gate charge\nExcellent output capacitance (C\noss) profile\n100% avalanche tested\nZener-protected;

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N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

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STMICROELECTRONICS

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Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

文件：1.12074 Mbytes 页数：21 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

文件：1.11956 Mbytes 页数：21 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.140 typ., 19 A MDmeshTM M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：824.76 Kbytes 页数：15 Pages

STMICROELECTRONICS

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