丝印：20N65M5；Package：I2PAKFP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

文件：1.05665 Mbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAKFP package

These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and sup Extremely low R\nDS(on)\nLow gate charge and input capacitance\nExcellent switching performance\n100% avalanche tested;

ST

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isc N-Channel MOSFET Transistor

文件：324.86 Kbytes 页数：2 Pages

ISC

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N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

文件：1.05665 Mbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

文件：1.17545 Mbytes 页数：21 Pages

STMICROELECTRONICS

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