N-channel 950 V, 0.41 Ohm typ., 12 A MDmesh K5 Power MOSFET in I2PAKFP package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Fully insulated and low profile package with increased creepage path from pin toheatsink plate\nIndustry’s lowest R\nDS(on) x area\nIndustry’s best FoM (figure of merit)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

ST

意法半导体

N-channel 950 V, 0.41 廓 typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

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STMICROELECTRONICS

意法半导体

Ultra low gate charge

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STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applic

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ISC

无锡固电