isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applic

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ISC

无锡固电

Ultra low gate charge

文件：1.25841 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N沟道950 V、0.41 Ohm典型值、12 A SuperMESH(TM) 5功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for app • TO-220 worldwide best RDS(on) \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.08 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra low gate charge

文件：1.25841 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 950 V, 0.41 廓 typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

文件：754.82 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体