丝印：14N80K5；Package：TO-281；N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

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STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a I2PAKFP package

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency Industry’s lowest R\nDS(on) x area\nIndustry’s best figure of merit (FoM)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

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意法半导体

N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

文件：459.69 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：725.27 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体