N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a I2PAKFP package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Industry’s lowest R\nDS(on) x area\nIndustry’s best figure of merit (FoM)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

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丝印：7LN80K5；Package：I2PAKFP；N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

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STMICROELECTRONICS

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N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

文件：898.56 Kbytes 页数：16 Pages

STMICROELECTRONICS

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Ultra-low gate charge

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STMICROELECTRONICS

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Zener-protected

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

文件：406.69 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体