N沟道800 V、0.95 Ohm典型值、5 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

Ultra-low gate charge

文件：719.73 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

文件：406.69 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

100 avalanche tested

文件：824.34 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：709.72 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.96 Kbytes 页数：2 Pages

ISC

无锡固电