N沟道800 V、0.95 Ohm典型值、5 A MDmesh K5功率MOSFET，PowerFLAT 5x6 VHV封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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丝印：7LN80K5；Package：PowerFLAT；N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

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STMICROELECTRONICS

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Ultra-low gate charge

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STMICROELECTRONICS

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Zener-protected

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

文件：406.69 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体