丝印：LED525；Package：TO-281；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

AT90USBxxx TQFP device (2.7V

文件：889.57 Kbytes 页数：39 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体