丝印：13N80K5；Package：I2PAKFP(TO-281)；N-channel 800 V, 0.37 ??typ.,12 A MDmesh??K5 Power MOSFET in an I짼PAKFP package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：1.02588 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in I2PAKFP package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Fully insulated and low profile package with increased creepage path from pin to heatsink plate\nIndustry’s lowest R\nDS(on)x area\nIndustry’s best figure of merit (FoM)\nUltra low gate charge\n100% avalanche tested\nZener-protected;

ST

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N-channel 800 V, 0.37 廓 typ., 12 A MDmesh??K5 Power MOSFET in a TO-220FP ultra narrow leads package

文件：754.17 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATIONS · Switching

文件：344.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D짼PAK, TO-220FP and TO-220 packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.60817 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体