STB13N80K5

Marking：13N80K5；Package：D2PAK；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STF13N80K5

Marking：13N80K5；Package：TO-220FP；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STFI13N80K5

Marking：13N80K5；Package：I2PAKFP(TO-281)；N-channel 800 V, 0.37 ??typ.,12 A MDmesh??K5 Power MOSFET in an I짼PAKFP package

Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie

STP13N80K5

Marking：13N80K5；Package：TO-220；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STW13N80K5

Marking：13N80K5；Package：TO-247；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno