型号：STB13N80K5；Package：D2PAK；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：1.20797 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

型号：STF13N80K5；Package：TO-220FP；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：1.20797 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

型号：STFI13N80K5；Package：I2PAKFP(TO-281)；N-channel 800 V, 0.37 ??typ.,12 A MDmesh??K5 Power MOSFET in an I짼PAKFP package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件：1.02588 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

型号：STP13N80K5；Package：TO-220；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：1.20797 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

型号：STW13N80K5；Package：TO-247；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：1.20797 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体