STW13N80K5

Marking：13N80K5；Package：TO-247；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STB13N80K5

N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STB13N80K5

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STF13N80K5

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STF13N80K5

N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STFI13N80K5

N-channel800V,0.37??typ.,12AMDmesh??K5PowerMOSFETinanI짼PAKFPpackage

Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie

STFU13N80K5

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V APPLICATIONS ·Switching

STFU13N80K5

N-channel800V,0.37廓typ.,12AMDmesh??K5PowerMOSFETinaTO-220FPultranarrowleadspackage

STP13N80K5

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

STP13N80K5

N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi