isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.02 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D짼PAK, TO-220FP and TO-220 packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.60817 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：13N80K5；Package：D2PAK；N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：1.20797 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.37 Ohm典型值、12 A MDmesh K5功率MOSFET，D2PAK封装

这款超高压N-沟道功率MOSFETs 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。 • 业界领先的低 RDS(on) x 面积 \n• 业界出色的品质因数（FoM） \n• 极低的栅极电荷 \n• 经过100％雪崩测试 \n• 稳压保护;

ST

意法半导体

N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：1.20797 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体