丝印：13RS60H；Package：LFPAK56D；N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Appl

文件：281.21 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司