丝印：13R；Package：UQFN；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI

德州仪器

丝印：13R；Package：UQFN(RSW)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

丝印：13R；Package：UQFN(RSW)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

丝印：13R；Package：SOT-23；General Purpose Transistors

文件：100.69 Kbytes 页数：2 Pages

FS

丝印：13R；Package：SOT-23；General Purpose Transistors

文件：102.07 Kbytes 页数：2 Pages

FS

丝印：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：13RL60H；Package：LFPAK56D；N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Applica

文件：283.2 Kbytes 页数：12 Pages

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