INA215BIRSWR

Marking：13R；Package：UQFN；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: –

FTC9013RLT1G

Marking：13R；Package：SOT-23；General Purpose Transistors

FTC9013SR

Marking：13R；Package：SOT-23；General Purpose Transistors

S-L9013PLT1G

Marking：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

S-L9013PLT3G

Marking：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

S-L9013QLT1G

Marking：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

S-L9013QLT3G

Marking：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

PSMN013-60HL

Marking：13RL60H；Package：LFPAK56D；N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DuallogiclevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Applica

PSMN013-60HS

Marking：13RS60H；Package：LFPAK56D；N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appl