N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a I2PAKFP package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie Industry’s lowest R\nDS(on) x area\nIndustry’s best figure of merit (FoM)\nUltra-low gate charge\n100% avalanche tested\nZener-protected;

ST

意法半导体

Ultra-low gate charge

文件：762.38 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

文件：795.5 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

文件：795.5 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体