N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab 100% avalanche tested\nExtremely high dv/dt capability\nGate charge minimized\nVery low intrinsic capacitances\nImproved diode reverse recovery characteristics\nZener-protected;

ST

意法半导体

N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?

文件：954.14 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?

文件：954.14 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：1.10788 Mbytes 页数：10 Pages

VBSEMI

微碧半导体