N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in I2PAKFP package

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFETs associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos 100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance;

ST

意法半导体

丝印：15NM65N；Package：TO-281；N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：923.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications

文件：294.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：807.56 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体