丝印：15NM65N；Package：TO-220FP；N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：807.56 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：15NM65N；Package：220FP；N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：923.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：15NM65N；Package：TO-281；N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：923.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：807.56 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体