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STFU15NM65N

isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications

文件:294.18 Kbytes 页数:2 Pages

ISC

无锡固电

STFU15NM65N

丝印:15NM65N;Package:TO-220FP;N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件:807.56 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

STFU15NM65N

N沟道650 V、0.35 Ohm典型值、12 A MDmesh II功率MOSFET,TO-220FP超窄引线封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

STI15NM65N

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件:499.91 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STI15NM65N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.27Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:284.98 Kbytes 页数:2 Pages

ISC

无锡固电

STP15NM65N

Isc N-Channel MOSFET Transistor

文件:317.58 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Package:

    TO-220FP ultra narrow leads

  • Grade:

    Industrial

  • VDSS(V):

    650

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.38

  • Drain Current (Dc)_max(A):

    12

  • PTOT_max(W):

    30

  • Qg_typ(nC):

    33.3

供应商型号品牌批号封装库存备注价格
ST/意法
25+
TO-220F
32000
ST/意法全新特价STFU15NM65N即刻询购立享优惠#长期有货
询价
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
STM
25+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
22+
NA
488
加我QQ或微信咨询更多详细信息,
询价
ST/意法
23+
TO220F
50000
全新原装正品现货,支持订货
询价
ST
22+
TO2203
9000
原厂渠道,现货配单
询价
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
STMicroelectronics
2022+
TO-220-3 整包
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST
23+
TO2203
8000
只做原装现货
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
更多STFU15NM65N供应商 更新时间2026-2-3 19:30:00