isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.27Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：284.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：317.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：499.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体