isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.285Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK

文件：998.82 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

MOSFET N-CH 600V 13A I2PAK

ST

意法半导体

N-channel 600 V, 0.260 廓, 6 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：610.57 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：1.18003 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK

文件：998.82 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体