isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) -RDS(on) = 3.8mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.17 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：262.029 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100 avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.17545 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.19Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：455.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 3 m廓, 120 A D2PAK, TO-220, I2PAK STripFET??Power MOSFET

文件：858.28 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

文件：1.17545 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.77 Kbytes 页数：2 Pages

ISC

无锡固电

Low gate input resistance

文件：573.92 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in an I2PAK package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su • Extremely low gate charge\n• Excellent output capacitance (COSS) profile\n• Very low turn-off switching losses• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

N沟道650 V、0.160 Ohm典型值、18 A MDmesh M5功率MOSFET，I2PAK封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体