首页>STI20N65M5>规格书详情
STI20N65M5中文资料N沟道650 V、0.160 Ohm典型值、18 A MDmesh M5功率MOSFET，I2PAK封装数据手册ST规格书
STI20N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSSrating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STI20N65M5
- 生产厂家
：ST
- Package
：I2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.19
- Drain Current (Dc)_max(A)
：18
- PTOT_max(W)
：130
- Qg_typ(nC)
：36
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
25+ |
TO262 |
32360 |
ST/意法全新特价STI20N65M5即刻询购立享优惠#长期有货 |
询价 | ||
ST |
08+ |
TO220 |
978 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
STMicroelectronics |
23+ |
TO262 |
50000 |
只做原装正品 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
2517+ |
TO262 |
8850 |
只做原装正品现货或订货假一赔十! |
询价 |
